On the influence of oxygen bombardment on the structure formation of hafnium oxide films

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详细

Hafnium oxide films were deposited by magnetron reactive sputtering under oxygen bombardment conditions. Structural analysis showed that the presence of oxygen bombardment during film growth leads to changes in the short-range order in the crystal structure of the films obtained.

作者简介

V. Luzanov

Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS

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Email: valery@luzanov.ru
俄罗斯联邦, Vvedenskii Squar., 1, Fryazino, Moscow Region, 141190

参考

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