Enviar artigo por via de e-mail On the influence of oxygen bombardment on the structure formation of hafnium oxide films
- Autores: Luzanov V.A.1
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Afiliações:
- Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS
- Edição: Volume 69, Nº 11 (2024)
- Páginas: 1076-1078
- Seção: Articles
- URL: https://cijournal.ru/0033-8494/article/view/684285
- DOI: https://doi.org/10.31857/S0033849424110058
- EDN: https://elibrary.ru/HOGBLL
- ID: 684285
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Resumo
Hafnium oxide films were deposited by magnetron reactive sputtering under oxygen bombardment conditions. Structural analysis showed that the presence of oxygen bombardment during film growth leads to changes in the short-range order in the crystal structure of the films obtained.
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Sobre autores
V. Luzanov
Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS
Autor responsável pela correspondência
Email: valery@luzanov.ru
Rússia, Vvedenskii Squar., 1, Fryazino, Moscow Region, 141190
Bibliografia
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