| Шығарылым |
Атауы |
Файл |
| Том 53, № 5 (2024) |
Development of an imagery representation apparatus for information representation in neyromorphic devices |
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Simonov N.
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| Том 54, № 1 (2025) |
Development of atomic layer deposition technological platform for the synthesis of micro- and nanoelectronics materials |
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Amashaev R., Isubgadzhiev S., Rabadanov M., Abdulagatov I.
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| Том 52, № 1 (2023) |
Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора |
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Локотко В., Васильевский И., Каргин Н.
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| Том 52, № 3 (2023) |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
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Tsunvaza D., Ryzhuk R., Vasil’evskii I., Kargin N., Klokov V.
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| Том 53, № 3 (2024) |
Development of the Ge-MDST instrument structure with an induced p-type channel |
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Alyabina N., Arkhipova E., Buzynin Y., Denisov S., Zdoroveishchev A., Titova A., Chalkov V., Shengurov V.
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| Том 52, № 1 (2023) |
Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |
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Zavitaev E., Rusakov O., Chukhleb E.
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| Том 52, № 6 (2023) |
Performance calculation for a MEMS switch with «floating» electrode |
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Morozov M., Uvarov I.
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| Том 54, № 1 (2025) |
Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models |
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Rogozhin A., Sidorov F.
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| Том 54, № 3 (2025) |
Self-assembly of 3D mesostructures using local ion-plasma treatment |
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Babushkin A., Selyukov R., Amirov I., Naumov V., Izyumov M.
|
| Том 54, № 2 (2025) |
Ferroelectric transistors: operating principles, materials, applications |
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Reznyukov А., Fetisenkova K., Rogozhin A.
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| Том 52, № 2 (2023) |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
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Rogozhin A., Sidorov F.
|
| Том 53, № 5 (2024) |
Parameters matching of the thermoelectric system parameters for cooling heat-loaded electronics elements |
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Vasil’ev Е.
|
| Том 53, № 6 (2024) |
Gas Phase Composition and Fluorine Atom Kinetics in SF6 Plasma |
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Myakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
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| Том 54, № 3 (2025) |
Stabilization of memristor cell states during initial switching process after forming |
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Fadeev A., Rudenko K.
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| Том 53, № 3 (2024) |
The structure and formation of non-volatile memory cells of Superflash |
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Abdullaev D., Bobrova E., Milovanov R.
|
| Том 54, № 3 (2025) |
Structure of thin titanium nitride films deposited by magnetron sputtering |
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Isaev A., Rogozhin A.
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| Том 53, № 1 (2024) |
Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses |
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Nefedov D., Shabunin N., Bratashov D.
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| Том 53, № 2 (2024) |
Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters |
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Lomov A., Seredin B., Martyushov S., Tatarintsev A., Popov V., Malibashev A.
|
| Том 53, № 5 (2024) |
Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor |
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Novoselov А., Gusev М., Masalsky N.
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| Том 54, № 3 (2025) |
Temperature characteristics of a simple current mirror on silicon high-voltage nLDMOS with a large DRIFT area |
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Novoselov A., Gusev M., Masal’skii N.
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| Том 53, № 3 (2024) |
Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs |
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Kagadey V., Kodorova I., Polyntsev E.
|
| Том 52, № 4 (2023) |
Tomography of Detectors Taking Dead Time into Account |
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Bogdanov Y., Katamadze K., Borshchevskaya N., Avosopiants G., Bogdanova N., Kulik S., Lukichev V.
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| Том 54, № 1 (2025) |
Formation of nickel-based composite magnetic nanostructures for microelectronics and nanodiagnostics devices |
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Vorobyova A., Tishkevich D., Outkina E., Khodin A.
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| Том 53, № 4 (2024) |
Evolution of the Current-Voltage Characteristic of a Bipolar Memristor |
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Fadeev A., Rudenko K.
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| Том 54, № 2 (2025) |
Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm2 |
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Glaz O., Rogozhin A.
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| Том 52, № 6 (2023) |
Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |
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Kovalchuk N., Lastovsky S., Odzhaev V., Petlitsky A., Prosolovich V., Shestovsky D., Yavid V., Yankovsky Y.
|
| Том 52, № 5 (2023) |
Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane |
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Murin D., Chesnokov I., Gogulev I., Grishkov A.
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| Том 52, № 1 (2023) |
Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана |
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Мурин Д., Пивоваренок С., Чесноков И., Гогулев И.
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| Нәтижелер 128 - 101/128 |
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