Thermodynamic modeling of phase formation conditions in the Si–O–C–H–He and Si–O–C–H–N–He systems

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Thermodynamic modeling of the film synthesis process from the gas phase in the Si–O–C–H–He and Si–O–C–H–N–He systems during the decomposition of hexamethyldisiloxane was performed. The modeling used the method for calculating chemical equilibria based on minimizing the Gibbs energy of the system, implemented using the Data Bank on the properties of electronic materials. It was shown that various phase complexes containing silicon oxide, carbide, and nitride can be obtained in CVD processes of such systems. The results of the thermodynamic modeling can be useful for developing methods for the synthesis of film coatings based on such phase complexes.

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作者简介

V. Shestakov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University of Architecture and Civil Engineering

编辑信件的主要联系方式.
Email: vsh@niic.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630008

M. Kosinova

aNikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: vsh@niic.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

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2. Fig. 1. CVD diagram of the thermal decomposition process of [(CH3)3Si]2O with a change in the total pressure in the reactor.

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3. Fig. 2. CVD diagram of the process in the [(CH3)3Si]2O + NO2 system with varying oxygen content in the initial gas mixture.

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4. Fig. 3. CVD diagram of the process in the [(CH3)3Si]2O + mNH3 system with varying ammonia content in the initial gas mixture.

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