Phase formation and optical properties of vanadium-doped aluminum oxynitride

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Abstract

The phase formation, morphology, and optical properties of aluminum oxynitride (Al5O6N) doped with vanadium ions were studied in the concentration range of 0.01–5.0 at. % (relative to aluminum). All samples were obtained by calcining mixtures of Al2O3, AlN, and V2O5 at a temperature of 1750°C in a nitrogen flow. The resulting materials were predominantly single-phase γ-AlON with minor impurities of aluminum nitride, as well as VC, VN, VO, or their solid solutions, for vanadium concentrations of ≥0.1 at. %. In AlON:V, the band gap (Eg) ranges from 5.82 to 5.94 eV, depending on the vanadium concentration. The luminescence of AlON:V is attributed to intrinsic defects and impurity luminescence centers. The presence of vanadium in AlON results in an increase in the optical absorption and a decrease in the intensity of intrinsic luminescence, which is caused by the formation of vanadium-containing impurity phases.

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About the authors

A. V. Ishchenko

Ural Federal University named after the first President of Russia B.N. Yeltsin

Author for correspondence.
Email: a-v-i@mail.ru
Russian Federation, Mira str., 19, Yekaterinburg, 620002

N. S. Akhmadullin

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

Email: a-v-i@mail.ru
Russian Federation, Leninsky Prospekt, 49, Moscow, 119334

I. I. Leonidov

Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences

Email: a-v-i@mail.ru
Russian Federation, Pervomaiskaya str., 91, Yekaterinburg, 620077

V. P. Sirotinkin

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

Email: a-v-i@mail.ru
Russian Federation, Leninsky Prospekt, 49, Moscow, 119334

I. A. Weinstein

Ural Federal University named after the first President of Russia B.N. Yeltsin; Institute of Metallurgy, Ural Branch, Russian Academy of Sciences

Email: a-v-i@mail.ru
Russian Federation, Mira str., 19, Yekaterinburg, 620002; Amundsen str., 101, Yekaterinburg, 620016

Yu. F. Kargin

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

Email: a-v-i@mail.ru
Russian Federation, Leninsky Prospekt, 49, Moscow, 119334

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Supplementary files

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2. Fig. 1. Diffraction patterns of samples in linear (a) and logarithmic (b) scales of AlON:V samples. The question mark (?) marks the peaks of unidentified phases. Reference reflections, their designations and PDF cards for V₆C₅, VN and VO are marked in the corresponding colors.

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3. Fig. 2. Dependence of the concentration of the vanadium-containing phase (a) and the lattice constant of AlON (b) on the concentration of vanadium. VX is the vanadium-containing phase, where X = C, N or O.

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4. Fig. 3. SEM image of the surface of the AlON:5V sample measured with a BSE detector (a) and element distribution maps: Al (b), O (c), V (d), N (e) and C (e). Light particles (a) contain elements with a higher atomic number (vanadium) than the gray ones. White dots mark the areas of elemental microanalysis, the composition is given in Table 1.

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5. Fig. 4. Raman spectra of AlON with 0.01, 0.1, 1 and 5 at.% V; D and G are bands of amorphous carbon.

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6. Fig. 5. Diffuse reflection spectra (a), absorption spectra (b), absorption spectra in Tauc coordinates of AlON:V samples without preliminary correction (c) and with preliminary correction (d).

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7. Fig. 6. Dependences of the reflection coefficient at a wavelength of 400 nm R(400 nm) and the optical gap width Eg of AlON:V samples on the vanadium concentration. The circles show the experimental values, the dotted lines show the approximating curves in the form of hyperbolic and exponential functions for R and Eg, respectively.

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8. Fig. 7. PCL spectra of AlON:V samples (a), decomposition of the PCL spectrum into luminescence band components using the example of the AlON:0.01V sample (b), dependence of the PCL intensity on the vanadium content in the AlON:V samples (c). The dotted line shows the result of approximating the experimental data with a hyperbolic function.

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