Recombination-enhanced of dislocation glide in 4H-SiC and GaN under electron beam irradiation

封面

如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅或者付费存取

详细

The analysis of the investigations of recombination-enhanced dislocation transport in GaN and 4H-SiC is carried out. It is shown that in both crystals, when irradiated with a low-energy electron beam, dislocations can shift even at liquid nitrogen temperature. The activation energies of dislocation glide stimulated by electron beam irradiation are estimated. The results are presented demonstrating practically activation-free migration of double kinks along a 30° partial dislocation with a silicon core in 4H-SiC. It is shown that localized obstacles significantly affect the dislocation transport in GaN both under the action of shear stresses and under irradiation. Nonequilibrium charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier, but also stimulate the detachment of dislocations from obstacles.

全文:

受限制的访问

作者简介

Y. Kulanchikov

Institute of Microelectronics Technology and High-Purity Materials, RAS

Email: yakimov@iptm.ru
俄罗斯联邦, Chernogolovka

P. Vergeles

Institute of Microelectronics Technology and High-Purity Materials, RAS

Email: yakimov@iptm.ru
俄罗斯联邦, Chernogolovka

E. Yakimov

Institute of Microelectronics Technology and High-Purity Materials, RAS

Email: yakimov@iptm.ru
俄罗斯联邦, Chernogolovka

E. Yakimov

Institute of Microelectronics Technology and High-Purity Materials, RAS

编辑信件的主要联系方式.
Email: yakimov@iptm.ru
俄罗斯联邦, Chernogolovka

参考

  1. Alexander H., Teichler H. // Handbook of Semiconductor Technology / Eds. Jackson K.A., Schroter W. Wiley-VCH, 2000. P. 291. https://doi.org/10.1002/9783527621842.ch6
  2. Maeda K. // Materials and Reliability Handbook for Semiconductor Optical and Electron Devices / Еds. Ueda O., Pearton S.J. New York: Springer Science and Business Media, 2013. P. 263. https://doi.org/10.1007/978-1-4614-4337-7_9
  3. Eberlein T.A.G., Jones R., Blumenau A.T. et al. // Appl. Phys. Lett. 2006. V. 88. 082113. https://doi.org/10.1063/1.2179115
  4. Skowronski M., Ha S. // J. Appl. Phys. 2006. V. 99. 011101. https://doi.org/10.1063/1.2159578
  5. Camassel J., Juillaguet S. // J. Phys. D. 2007. V. 40. P. 6264. https://doi.org/10.1088/0022-3727/40/20/S11
  6. Callahan P.G., Haidet B.B., Jung D. et al. // Phys. Rev. Mater. 2018. V. 2. 081601(R). https://doi.org/10.1103/PhysRevMaterials.2.081601
  7. Ha S., Benamara M., Skowronski M. // Appl. Phys. Lett. 2003. V. 83. P. 4957. https://doi.org/10.1063/1.1633969
  8. Yakimov E.B. // J. Alloys Compd. 2015. V. 627. P. 344. https://doi.org/10.1016/j.jallcom.2014.11.229
  9. Якимов Е.Б. // Кристаллография. 2021. Т. 66. № 4. С. 540. https://doi.org/10.31857/S0023476121040226
  10. Egerton R.F., Li P., Malac M. // Micron. 2004. V. 35. P. 399. https://doi.org/10.1016/j.micron.2004.02.003
  11. Tokunaga T., Narushima T., Yonezawa T. et al. // J. Microscopy. 2012. V. 248. Pt. 3. P. 228. https://doi.org/10.1111/j.1365-2818.2012.03666.x
  12. Bouscaud D., Pesci R., Berveiller S. et al. // Ultramicroscopy. 2012. V. 115. P. 115. https://doi.org/
  13. Yakimov E.E., Yakimov E.B. // J. Alloys Compd. 2020. V. 837. 155470. https://doi.org/10.1016/j.jallcom.2020.155470
  14. Ishikawa Y., Sudo M., Yao Y.-Z. et al // J. Appl. Phys. 2018. V. 123. 225101. https://doi.org/10.1063/1.5026448
  15. Yakimov E.B. // Phys. Status Solidi. C. 2017. V. 14. 1600266. https://doi.org/10.1002/pssc.201600266
  16. Якимов Е.Б. // Поверхность. Рентген., синхротрон. и нейтрон. исслед. 2018. № 10. С. 66. https://doi.org/10.1134/S0207352818100219
  17. Davidson S.M., Dimitriadis C.A. // J. Microsc. 1980. V. 118. P. 275. https://doi.org/10.1111/j.1365-2818.1980.tb00274.x
  18. Yakimov E.B., Polyakov A.Y., Shchemerov I.V. et al. // Appl. Phys. Lett. 2021. V. 118. 202106. https://doi.org/10.1063/5.0053301
  19. Gsponer A., Knopf M., Gagg P. et al. // Nucl. Instrum. Methods Phys. Res. A. 2024. V. 1064. 169412. https://doi.org/10.1016/j.nima.2024.169412
  20. Yakimov E.B., Regula G., Pichaud B. // J. Appl. Phys. 2013. V. 114. 084903. https://doi.org/10.1063/1.4818306
  21. Idrissi H., Pichaud B., Regula G., Lancin M. // J. Appl. Phys. 2007. V. 101. 113533. https://doi.org/10.1063/1.2745266
  22. Orlov V.I., Regula G., Yakimov E.B. // Acta Mater. 2017. V. 139. P. 155. https://doi.org/10.1016/j.actamat.2017.07.046
  23. Yakimov E.E., Yakimov E.B. // Phys. Status Solidi. A. 2022. V. 219. 2200119. https://doi.org/10.1002/pssa.202200119
  24. Orlov V.I., Yakimov E.E., Yakimov E.B. // Phys. Status Solidi. A. 2019. V. 216. 1900151. https://doi.org/10.1002/pssa.201900151
  25. Sudo M., Ishikawa Y., Yao Y.-Z. et al. // Mater. Sci. Forum. 2018. V. 924. P. 151. https://doi.org/10.4028/www.scientific.net/MSF.924.151
  26. Yakimov E.E., Yakimov E.B. // J. Phys. D. 2022. V. 55. 245101. https://doi.org/10.1088/1361-6463/ac5c1b
  27. Yamashita Y., Nakata R., Nishikawa T. et al. // J. Appl. Phys. 2018. V. 123. 161580. https://doi.org/10.1063/1.5010861
  28. Konishi K., Fujita R., Shima A. et al. // Mater. Sci. Forum. 2017. V. 897. P. 214. https://doi.org/10.4028/www.scientific.net/MSF.897.214
  29. Tawara T., Matsunaga S., Fujimoto T. et al. // J. Appl. Phys. 2018. V. 123. 025707. https://doi.org/10.1063/1.5009365
  30. Yakimov E.E., Yakimov E.B., Orlov V.I., Gogova D. // Superlattices and Microstructures. 2018. V. 120. P. 7. https://doi.org/10.1016/j.spmi.2018.05.014
  31. Ohno Y., Yonenaga I., Miyao K. et al. // Appl. Phys. Lett. 2012. V. 101. 042102. https://doi.org/10.1063/1.4737938
  32. Regula G., Lancin M., Pichaud B. et al. // Philos. Mag. 2013. V. 93. P. 1317. https://doi.org/10.1080/14786435.2012.745018
  33. Savini G. // Phys. Status Solidi. C. 2007. V. 4. P. 2883. https://doi.org/10.1002/pssc.200675433
  34. Yang J., Izumi S., Muranaka R. et al. // Mech. Eng. J. 2015. V. 2. № 4. P. 1. https://doi.org/10.1299/mej.15-00183
  35. Miao M.S., Limpijumnong S., Lambrecht W.R.L. // Appl. Phys. Lett. 2001. V. 79. P. 4360. https://doi.org/10.1063/1.1427749
  36. Galeckas A., Linnoris J., Pirouz P. // Phys. Rev. Lett. 2006. V. 96. 025502. https://doi.org/10.1103/PhysRevLett.96.025502
  37. Caldwell J.D., Stahlbush R.E., Ancona M.G. et al. // J. Appl. Phys. 2010. V. 108. 044503 https://doi.org/10.1063/1.3467793
  38. Pirouz P. // Phys. Status Solidi. A. 2013. V. 210. P. 181. https://doi.org/10.10.1002/pssa.201200501
  39. Mannen Y., Shimada K., Asada K. et al. // J. Appl. Phys. 2019. V. 125. 085705. https://doi.org/10.1063/1.5074150
  40. Iijima A., Kimoto T. // Appl. Phys. Lett. 2020. V. 116. 092105. https://doi.org/10.1063/1.5143690
  41. Miyanagi T., Kamata I., Tsuchida H. et al. // Appl. Phys. Lett. 2006. V. 89. 062104. https://doi.org/10.1063/1.2234740
  42. Caldwell J.D., Stahlbush R.E., Hobart K.D. et al. // Appl. Phys. Lett. 2007. V. 90. 143519. https://doi.org/10.1063/1.2719650
  43. Caldwell J.D., Glembocki O.J., Stahlbush R.E. et al. // J. Electron. Mater. 2008. V. 37. P. 699. https://doi.org/10.1007/s11664-007-0311-5
  44. Okada A., Nishio J., Iijima R. et al. // Jpn. J. Appl. Phys. 2018. V. 57. 061301. https://doi.org//10.7567/JJAP.57.061301
  45. Feklisova O.V., Yakimov E.E., Yakimov E.B. // Appl. Phys. Lett. 2020. V. 116. 172101. https://doi.org/10.1063/5.0004423
  46. Maeda K., Murata K., Kamata I. et al. // Appl. Phys. Express. 2021. V. 14. 044001. https://doi.org/10.35848/1882-0786/abeaf8
  47. Iijima A., Kimoto T. // J. Appl. Phys. 2019. V. 126. 105703. https://doi.org/10.1063/1.5117350
  48. Bradby J.E., Kucheyev S.O., Williams J.S. et al. // Appl. Phys. Lett. 2002. V. 80. P. 383. https://doi.org/10.1063/1.1436280
  49. Jahn U., Trampert A., Wagner T. et al. // Phys. Status Solidi. A. 2002. V. 192. P. 79. https://doi.org/10.1002/1521-396X(200207)192:1<79::AID-PSSA79>3.0.CO;2-5
  50. Jian S.R. // Appl. Surf. Sci. 2008. V. 254. P. 6749. https://doi.org/10.1016/j.apsusc.2008.04.078
  51. Huang J., Xu K., Gong X.J. et al. // Appl. Phys. Lett. 2011. V. 98. 221906. https://doi.org/10.1063/1.3593381
  52. Orlov V.I., Vergeles P.S., Yakimov E.B. et al. // Phys. Status Solidi. A. 2019. V. 216. 1900163. https://doi.org/10.1002/pssa.201900163
  53. Orlov V.I., Polyakov A.Y., Vergeles P.S. et al. // ECS J. Solid State Sci. Technol. 2021. V. 10. 026004. https://doi.org/10.1149/2162-8777/abe4e9
  54. Yakimov E.B., Kulanchikov Y.O., Vergeles P.S. // Micromachines. 2023. V. 14. 1190. https://doi.org/ 10.3390/mi14061190
  55. Maeda K., Suzuki K., Ichihara M. et al. // Phys. B. Condens. Matter. 1999. V. 273. P. 134. http://dx.doi.org/10.1016/S0921-4526(99)00424-X
  56. Tomiya S., Goto S., Takeya M. et al. // Phys. Status Solidi. A. 2003. V. 200. P. 139. http://dx.doi.org/10.1002/pssa.200303322
  57. Yakimov E.B., Vergeles P.S., Polyakov A.Y. et al. // Appl. Phys. Lett. 2015. V. 106. 132101. http://dx.doi.org/10.1063/1.4916632
  58. Якимов Е.Б., Вергелес П.С. // Поверхность. Рентген., синхротрон. и нейтрон. исслед. 2016. № 9. С. 81. http://dx.doi.org/10.7868/S0207352816090171
  59. Yakimov E.B., Vergeles P.S., Polyakov A.Y. et al. // Jpn. J. Appl. Phys. 2016. V. 55. 05FM03. http://doi.org/10.7567/JJAP.55.05FM03
  60. Medvedev O.S., Vyvenko O.F., Bondarenko A.S. et al. // AIP Conf. Proc. 2016. V. 1748. 020011. http://dx.doi.org/10.1063/1.4954345
  61. Vergeles P.S., Orlov V.I., Polyakov A.Y. et al. // J. Alloys Compd. 2019. V. 776. P. 181. http://doi.org/10.1063/1.4954345
  62. Vergeles P.S., Kulanchikov Yu.O., Polyakov A.Y. et al. // ECS J. Solid State Sci. Technol. 2022. V. 11. 015003. http://dx.doi.org/10.1149/2162-8777/ac4bae

补充文件

附件文件
动作
1. JATS XML
下载
2. Fig. 1. Dependences of the lengths of single and double DUs introduced by indentation at room temperature on the temperature of subsequent annealing [21]. The loads and durations of deformation are shown in the figure.

下载 (70KB)
索引源数据
3. Fig. 2. DU image in the CL mode at a wavelength of 424 nm. The lines mark the positions of partial dislocations in previous scans. It is evident that inclined and horizontal dislocations are displaced by different distances.

下载 (149KB)
索引源数据
4. Fig. 3. DU image in the CL mode at a wavelength of 424 nm: at a scan rate of 160 s/frame (a), the subsequent image at a scan rate of 20 s/frame (b); c – Fig. a, superimposed on Fig. b, the lines mark the positions of dislocations in Fig. a.

下载 (343KB)
索引源数据
5. Fig. 4. Dislocation velocity as a function of beam current at Eb = 20 keV and temperatures of 80 and 300 K. The extrapolated dependences intersect the abscissa axis at approximately 10 nA.

下载 (70KB)
索引源数据
6. Fig. 5. Panchromatic images obtained at liquid nitrogen temperature before (a) and after nine consecutive scans at a rate of 160 s/frame (b); displaced dislocations are marked with arrows. Eb = 10 keV.

下载 (484KB)
索引源数据
7. Fig. 6. Panchromatic images obtained at room temperature before (a) and after irradiation with an electron beam with a fixed position (b); the arrow indicates the beam position. Eb = 10 keV.

下载 (243KB)
索引源数据

版权所有 © Russian Academy of Sciences, 2025