Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics
- Authors: Belorusov D.A.1, Goldman E.I.1, Chucheva G.V.1, Shusharin I.A.1
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Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences
- Issue: Vol 69, No 7 (2024)
- Pages: 656-663
- Section: НАНОЭЛЕКТРОНИКА
- URL: https://cijournal.ru/0033-8494/article/view/681462
- DOI: https://doi.org/10.31857/S0033849424070076
- EDN: https://elibrary.ru/HYVSYW
- ID: 681462
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