Автор туралы ақпарат

Агеева, Н. Н.

Шығарылым Бөлім Атауы Файл
Том 68, № 3 (2023) ОБЗОР Intrinsic Stimulated Intense Picosecond Emission in the Amplification Saturation Mode and the “Threshold” State of Electron-Hole Plasma in the AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure
Том 69, № 2 (2024) ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ Dimensional resonance of intrinsic stimulated picosecond emission while it induces a photonic crystal and electron population oscillations in heterostructure AlxGa1–xAs–GaAs–AlxGa1–xAs
Том 69, № 7 (2024) ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ Dynamics of dimensional resonance of intrinsic picosecond emission in the heterostructure of AlxGa1-xAs–GaAs–AlxGa1-xAs, in which this emission induces a photonic crystal and oscillations of electron population
Том 70, № 1 (2025) ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region
Том 70, № 2 (2025) ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ Factors that reduce the duration of picosecond stimulated emission of the AlxGa1–xAs–GaAs–AlxGa1–xAs heterostructure