Автор туралы ақпарат

Белорусов, Д. А.

Шығарылым	Бөлім	Атауы	Файл
Том 68, № 10 (2023)	НАНОЭЛЕКТРОНИКА	Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.
Том 68, № 9 (2023)	К 70-ЛЕТИЮ ИРЭ ИМ. В.А. КОТЕЛЬНИКОВА РАН	The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures
Том 69, № 7 (2024)	НАНОЭЛЕКТРОНИКА	Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics
Том 69, № 7 (2024)	НАНОЭЛЕКТРОНИКА	Application of high–frequency impedance model of metal–three-layer insulating gap-silicon structures to characteristics of real objects